By John D. Cressler
What turns out regimen at the present time used to be no longer consistently so. the sector of Si-based heterostructures rests solidly at the shoulders of fabrics scientists and crystal growers, these purveyors of the semiconductor “black arts” linked to the deposition of pristine movies of nanoscale dimensionality onto huge, immense Si wafers with close to countless precision. we will now develop near-defect loose, nanoscale movies of Si and SiGe strained-layer epitaxy appropriate with traditional high-volume silicon built-in circuit production. SiGe and Si Strained-Layer Epitaxy for Silicon Heterostructure Devices tells the fabrics aspect of the tale and info the numerous advances within the Si-SiGe strained-layer epitaxy for machine purposes.
Drawn from the great and well-reviewed Silicon Heterostructure Handbook, this quantity defines and info the various advances within the Si/SiGe strained-layer epitaxy for equipment functions. Mining the skills of a world panel of specialists, the e-book covers glossy SiGe epitaxial progress innovations, epi defects and dopant diffusion in skinny motion pictures, balance constraints, and digital houses of SiGe, strained Si, and Si-C alloys. It contains appendices on themes similar to the homes of Si and Ge, the generalized Moll-Ross family, critical charge-control family members, and pattern SiGe HBT compact version parameters.
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